Publications2013
- T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, V. Lysenko Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs Semiconductor Physics, Quantum Electronics & Optoelectronics. - 2013. -vol.16, No.3. -pp. 299-314
- A.N. Nazarov, A.V. Vasin, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, A.S. Hirov, A.V. Rusavsky, V.P. Popov and V.S. Lysenko Graphene layers fabricated from the Ni/a-SiC bilayer precursor Semiconductor Physics, Quantum Electronics & Optoelectronics, - 2013. -vol.16, No.4. -pp. 335-341
- R. Yu, A.N. Nazarov, V.S. Lysenko, S. Das, I. Ferain, P. Razavi, M. Shayesteh, A. Kranti, R. Duffy, J.-P. Colinge Impact ionization induced dynamic floating body effect in junctionless transistors Solid-State Electronics. – 2013. - vol.90, No.12. - pp.28-33
- M.A. Negara, V. Djara, T.P. O’Regan, K. Cherkaoui, M. Burke, Y.Y. Gomeniuk, M. Schmidt, E. O’Connor, I.M. Povey, A.J. Quinn, P.K. Hurley Investigation of Electron Mobility in Surface-Channel Al2O3/In0.53Ga0.47As MOSFETs Solid-State Electronics. – 2013. -vol.88. -pp.37–42
- A.V. Vasin, Y.Y. Gomeniuk, A.V. Rusavsky, A.N. Nazarov, V.S. Lysenko, P.M. Lytvyn, O.G. Gontar, S.P. Starik, C. Nouveau and S. Ashok Nano- and micro-scale morphological defects in oxidized a-SiC:H thin films Phys. Status Solidi C. - 2013. -vol.10, No.4. -pp.619–623
- A.N. Nazarov, S.O. Gordienko, P.M. Lytvyn, V.V. Strelchuk, A.S. Nikolenko, A.V. Vasin, A.V. Rusavsky, V.S. Lysenko and V.P. Popov Characterization of graphene layers by Kelvin probe force microscopy and micro-Raman spectroscopy Phys. Status Solidi C. - 2013. -vol.10, No.7–8. pp.1172–1175
- V.A. Ievtukh, A.N. Nazarov, V.I. Turchanikov and V.S. Lysenko Nanocluster NVM Cells Metrology: Window formation, Relaxation and Charge Retention Measurements Advanced Materials Research. - 2013. -vol.718-72. –pp.1118-1123
- V. Ievtukh, A. Nazarov, V. Turchanikov, V. Lysenko, A. Nassiopoulou Charge trapping processes at memory window formation in single- and double nanocrystal layered NVMs Microelectronic engineering – 2013. -vol.109. –pp.5-9
- N.M. Roshchina, P.S. Smertenko, V.G. Stepanov, L.V. Zavyalova, O.S. Lytvyn Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method Solid State Phenomena. – 2013. -vol.200. –pp.3-9
- I.P. Tyagulskii, S.I. Tyagulskii, A.N. Nazarov, V.S. Lysenko, K. Cherkaoui, P.K. Hurley Thermally activated analysis of LaSiOx/Si and GdSiOx/Si structures at cryogenic temperatures Microelectronic Engineering. - 2013. -vol.109. -pp.31–34
- T. Rudenko, A. Nazarov, R. Yu, S. Barraud, K. Cherkaoui, P. Razavi, G. Fagas Electron mobility in heavily doped junctionless nanowire SOI MOSFETs Microelectronic Engineering. - 2013. -vol.109. -pp.326–329
- T. Rudenko, R. Yu, S. Barraud, K. Cherkaoui and A. Nazarov Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects IEEE Electron Device Letters. - 2013. -vol.34, No.8. -pp.957-959
- Y.Y. Gomeniuk, Y.V. Gomeniuk, A.N. Nazarov, S. Monaghan, K. Cherkaoui, E. O’Connor, I. Povey, V. Djara and P.K. Hurley Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure ECS Transactions. - 2013. –vol.58 (7). -pp.379-384
- S.O. Gordienko, A.N. Nazarov, P.M. Lytvyn, A.A. Stadnik, Y.Y. Gomeniuk, A.V. Rusavsky, A.V. Vasin, V.G. Stepanov, V.S. Lysenko, T.M. Nazarova Carbon-rich nanostructured a-SiC for cold emitters Electronics and Nanotechnology (ELNANO), 2013 IEEE XXXIII International Scientific Conference, -pp.76–79
- V.S. Lysenko, S.V. Kondratenko, Y.N. Kozyrev, V.P. Kladko, Y.V. Gomeniuk, Y.Y. Melnichuk, and N.B. Blanchard Surface reconstruction and optical absorption changes for Ge nanoclusters grown on chemically oxidized Si (100) surfaces Semicond. Sci. and Technology. – 2013. -vol.28. - p.085009-1 - 085009-9
- J. Lin, Y.Y. Gomeniuk, S. Monaghan, I.M. Povey, K. Cherkaoui, E. O’Connor, M. Power and P.K. Hurley An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors J. Appl. Phys. – 2013. -vol.114. -pp.144105