English Ukrainian Russian

Navigation

Links

ISP NAS of Ukraine

Publications2012

  1. Y.V. Gomeniuk Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2012. –vol.15, No.1. -pp.1-7

  2. Y.V. Gomeniuk Current transport mechanisms in metal - high-k dielectric - silicon structures Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2012. –vol.15, No.2. -pp.139-146

  3. V. Lozovski, V. Lysenko, M. Spivak, V. Sterligov Interaction between viral particles and structured metal surface under surface plasmon propagation Semiconductor Physics, Quantum Electronics & Optoelectronics. – 2012. –vol.15, No.1. -pp.80-82

  4. A. Vasin, A. Rusavsky, A. Nazarov, V. Lysenko, G. Rudko, Y. Piryatinski, I. Blonsky, Ja. Salonen, E. Makila, S. Starik Excitation effects and luminescence stability in porous SiO2:C layers Phys. Status Solidi A – 2012, -vol.209, No.6, -pp.1015–1021

  5. S.O. Gordienko, A.N. Nazarov, A.V. Vasin, A.V. Rusavsky, V.S. Lysenko Correlation of nanostructure and charge transport properties of oxidized a-SiC:H films Phys. Status Solidi C. – 2012. –vol.9, No.6. –pp.1477–1480

  6. S. Tiagulskyi, A. Nazarov, I. Tyagulskii, V. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa Shell model for REOx nanoclusters in amorphous SiO2: charge trapping and electroluminescence quenching Phys. Status Solidi C. – 2012. –vol.9, No.6. –pp.1468–1470

  7. Y.V. Gomeniuk, S.O. Gordienko, A.N. Nazarov, A.V. Vasin, A.V. Rusavsky, V.G. Stepanov, V.S. Lysenko, D. Ballutaud, S. Ashok Effect of vacuum annealing on charge transport and trapping in a-Si1-xCx:H/c-Si heterostructures Journal of Non-Crystalline Solids. – 2012. –vol.358. – pp.168–173

  8. A.V. Vasin, A.V. Rusavsky, A.N. Nazarov, V.S. Lysenko, P.M. Lytvyn, V.V. Strelchuk, K.I. Kholostov, V.P. Bondarenko, S.P. Starik Identification of nanoscale structure and morphology reconstruction in oxidized a-SiC:H thin films Applied Surface Science. – 2012. –vol.260. – pp.73–76

  9. T. Rudenko, A. Nazarov, I. Ferain, S. Das, R. Yu, S. Barraud, P. Razavi Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors Applied Physics Letters. – 2012. –vol.101. – pp.213502

  10. E. O’Connor, K. Cherkaoui, S. Monaghan, D. O’Connell, I. Povey, P. Casey, S.B. Newcomb, Y.Y. Gomeniuk, G. Provenzano, F. Crupi, G. Hughes, P.K. Hurley Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates J. Appl. Phys. – 2012. –vol.111. – pp.124104

  11. S.I. Tiagulskyi, I.P. Tyagulskiy, A.N. Nazarov, T.M. Nazarova, N.L. Rymarenko, V.S. Lysenko, L. Rebohle, J. Lehmann, W. Skorupa Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOx Nanoclusters ECS Transactions. - 2012. –vol.45, No.5. – pp.161-166

  12. V.S. Lysenko, S.V. Kondratenko, Yu.N. Kozyrev, M.Yu. Rubezhanska, V.P. Kladko, Y.V. Gomeniuk, O.Y. Gudymenko, Ye.Ye. Melnichuk, G. Grenet, N.B. Blanchard Morphology and optical properties of tetragonal Ge nanoclusters grown on chemically oxidized Si(100) surfaces Ukr. J. Phys., 2012, vol.57, No.11, pp.1132-1140

  13. S.I. Tyagulskiy, I.P. Tyagulskiy, A.N. Nazarov, V.S. Lysenko, T.M. Nazarova, L. Rebohle, J. Lehmann, W. Skorupa Shell Model for Electroluminescence Quenching of Metal-Oxide-Silicon Light-Emitting Devices with SiO2 Enriched with ReOx Nanoclusters Proceeding of the XXXII International Conference ELNANO (Electronics And Nanotechnology) 2012, April 10-12, Kyiv, Ukraine, Kyiv 2012 -pp.55-57