- V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs Microelectronics Reliability, vol.40, pp.735-738 (2000)
- V.S. Lysenko, I.P. Tyagulski, I.N. Osiyuk and Y.V. Gomeniuk Effect of shallow oxide traps on the low-temperature operation of SOI transistors Science and Technologies for Novel SOI Devices, NATO Science Series, vol.73. Kluwer Academic Publishers, pp.307-313 (2000)
- V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk Effect of the charge state of traps on the transport current in the SiC/Si heterostructure Semicond. Phys., Quantum Electronics and Optoelectronics, vol.3, No.3, pp.330-337 (2000)
- V.S. Lysenko, I.P. Tyagulski, Y.V. Gomeniuk, I.N. Osiyuk Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors Microelectronics Reliability, vol.40, pp.799-802 (2000)
- N.V. Novikov, A.G. Gontar, S.I. Khandozhko, A.M. Kutsay, V.N. Tkach, V.Yu. Gorokhov, G.M. Belitsky, A.V. Vasin Protective diamond-like coatings for optical materials and electronic devices Diamond and Related Materials, vol.9, No.3-6, pp.792-795 (2000)
- A.N. Nazarov, V.I. Kilchitska, I.P. Barchuk, A.S. Tkachenko and S. Ashok, Radio freaquency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon J. Vac. Sci. Technol. B, vol.18(3), pp.1156-1164 (2000)
- I. Barchuk, V. Kilchytska, A. Nazarov Study of the positive charge buildup into buried oxide of SIMOX SOI structure during bias-temperature stress Microelectronics Reliability, vol.40, pp.811-814 (2000)
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